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Please use this identifier to cite or link to this item: http://hdl.handle.net/1812/731

Title: Optimization and characterization of 130 NM CMOS transistor design using TCAD simulation
Authors: Hani Noorashiqin Abd. Majid
Keywords: Microelectronic device
CMOS
MOSFET
Lightly Doped Drain
LDD
TSUPREM-4
MEDICI
Transistor
Issue Date: 2007
Publisher: University of Malaya
Abstract: ABSTRACT Microelectronic device manufacture encompasses the fabrication, testing and simulation, of structures utilized in a variety of application specific integrated circuits. The fabrication of transistors, traditionally from elemental silicon wafer is conducted in a clean room environment utilizing various types of equipment. Process simulation is a critical element in facilitating the optimization of fabrication stages, confirming test results and theoretical models and providing physical insight into structural operation. TSUPREM-4 and MEDICI are two simulators that had been calibrated and used in this work. As device sizes are scaled down, novel structures are proposed such as halo (pocket), lightly doped drain (LDD) and source/drain process. In order to characterize and optimize Silterra 130 nm CMOS transistor design, TCAD simulation is done in this work and the results is compared with measured data and was verified to be in the Silterra specification range. Various doses, implant energies and tilt angle is used to upgrade the transistor performance, reduce the short channel effect and increase the transistor lifetime. Halo implant, lightly doped drain (LDD) implant and source/drain (S/D) implant is the three drain engineering structure to be characterized in this work. It is found that at certain dose, implant energy and tilt angle, the best saturation drain current, Idsat and threshold voltage, Vt that can match the specification target for NMOS and PMOS transistor can be achieved. It is also proved in this work that by using process and device simulator, the correct process can be predicted and the physical insight of the structure such as current flow lines and doping concentrations can be further analyzed. ABSTRAK Pengeluaran peranti mikroelektronik merangkumi pembuatan, menguji dan simulasi, struktur-struktur yang digunakan dalam pelbagai aplikasi khusus litar-litar bersepadu. Pembuatan transistor, terdiri daripada wafer silikon asas dikendalikan dalam satu persekitaran tempat bersih dengan menggunakan pelbagai jenis peralatan. Proses simulasi adalah satu unsur penting yang membantu dalam mengoptimumkan peringkatperingkat pembuatan, mengesahkan hasil percubaan dan model-model teori dan menyediakan fahaman secara fizikal ke atas operasi struktur. TSUPREM-4 dan MEDICI adalah dua jenis simulator yang telah ditentukurkan dan digunakan dalam tugas ini. Setelah saiz-saiz peranti telah diturunkan, struktur-struktur novel telah dicadangkan seperti proses implant halo ‘halo (pocket)’, ‘lightly doped drain (LDD)’ dan proses ‘source/drain’. Dalam peringkat untuk mencirikan dan mengoptimumkan rekabentuk transistor CMOS Silterra 130 nm, simulasi TCAD telah dijalankan dalam projek ini dan hasil-hasilnya telah dibandingkan dengan data yang telah diukur dan telah disahkan ia berada di dalam julat spesifikasi Silterra. Pelbagai dos, tenaga mengimplan dan sudut mengimplan digunakan untuk menaiktaraf prestasi transistor, mengurangkan kesan saluran pendek dan menambah jangka hayat transistor. Implan halo, ‘lightly doped drain (LDD)’ dan proses ‘source/drain’ adalah tiga jenis struktur kejuruteraan parit yang akan dikaji dalam kerja ini. Didapati, dengan dos tertentu, tenaga implan dan sudut condong implan, arus parit tepu, Idsat dan voltan ambang, Vt yang terbaik dapat menepati sasaran spesifikasi bagi transistor NMOS dan PMOS. Dalam kerja ini ia dapat dibuktikan bahawa dengan menggunakan proses dan alat simulator, proses yang menepati spesifikasi dapat diramal dan struktur dalaman seperti aliran arus dan kepekatan pengedopan seterusnya dapat dianalisa.
Description: Dissertation -- Faculty of Science, University of Malaya, 2007.
URI: http://dspace.fsktm.um.edu.my/handle/1812/731
Appears in Collections:Masters Dissertations : Science

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